Bücher von Xing Lu

Nanocarbon chemistry and physics is a fast-developing, broad research area ¿ the Nobel prizes in 1996 and 2010 awarded to two key discoveries in the field, and several other nanocarbon achievements of comparable importance. Owing to this rapid growth, the nanocarbon landscape fundamentally changes every few years, creating a need to survey the field on a regular basis to update the books that have become incomplete or even obsolete. As such, this book focuses on fullerenes and metallofullerenes and also on the related areas of nanotubes and graphenes. All the covered research topics provide important fundamental knowledge for the natural sciences, but also for applications in molecular electronics, superconductivity, catalysis, photovoltaics and medical diagnostics. The current nanocarbon research activities have particularly high application potential in the conversion of solar energy, future molecular memories, non-conventional materials for optoelectronics,and new treatments for civilization diseases. Offering a truly up-to-date critical survey of nanocarbon science, its concepts and highlights, it follows the concept of a handbook: it addresses key topics systematically, from historical background, methodological aspects, current important issues, and application potential, all supplied with extensive referencing. With individual chapters written by leading experts with extensive research experience, it is a comprehensive reference resource for graduate students and active researchers alike.

Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.