Bücher der Reihe Selected Topics in Electronics and Systems

Suitable for device and electronics engineers and scientists, this work covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices.

This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.

Surface acoustic wave (SAW) devices are recognized for their versatility and efficiency in controlling and processing electrical signals. This text, together with Volume 2, presents an overview of advances in SAW technology, systems and applications by researchers in the field.

CMOS technology is becoming a serious contender for radio frequency (RF) applications in the GHz range. This text discusses many of the challenges facing the CMOS RF circuit designer in terms of device modelling and characterization, which are crucial issues in circuit simulation and design.

This book brings together seven selected best papers presented at the 2014 Russia-Japan-USA Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUS TeraTech-2014), which was held at the University of Buffalo, New York, USA on 17-21 June 2014.

Rapid pace of electronic technology evolution and current economic climate compel a merger of such technical areas as low-power digital electronics, microwave power circuits, optoelectronics, etc., which collectively have become the foundation of today's electronic technology.This Workshop aims at encouraging active cross-fertilization of the different ""species"" in this electronic planet. The WOFE2015 had gather experts from academia, industry, and government agencies to review the recent exciting breakthroughs and their underlying physical mechanisms.This Monographs includes ten invited articles; cover topics ranging from Ultra-thin silicon nanowire solar cells, to hydrogen generation under illumination of GaN-based structures and from ultrafast response of nanoscale device structures to Power device optimization.

Terahertz (THz) electromagnetic waves, phenomena in the THz range and related technological issues have been explosively investigated during the recent two decades. However, its potential as a disruptive technology to commercial applications has yet to make any impression.The Russia-Japan-USA-Europe Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUSE-TeraTech 2016), held at Katahira Campus of Tohoku University, Sendai, Japan on October 31 - November 4, 2016, aims to bring together researchers from Russia, Japan, USA and Europe, who are working on the broad range of related problems in the terahertz devices, technologies and applications, to discuss on state-of-the-art results and future directions and collaborations in the development of THz.This is the fifth in the series of preceding successful symposiums in Terahertz Devices and Technologies. It contains 14 selected extended papers presented at the RJUSE-TeraTech 2016 symposium, addressing the variety of topics, in particular, THz detectors based on double heterojunction bipolar transistors (DHBT) and field effect transistors (FET) utilizing resonant plasma effects, quantum cascade (QCL) and HgCdTe quantum-well heterostructures, and graphene-based THz devices.

This book brings together 11 invited papers from the Workshop on Frontiers in Electronics (WOFE) 2013 that took place at San Juan, Puerto Rico, in December 2013.

Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development.In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems.

In this volume, we have put together papers spanning a broad range - from the area of modeling of strain and misfit dislocation densities, microwave absorption characteristics of nanocomposites, to X-ray diffraction studies.Specific topics in this volume include: Modeling of strain relaxation and defect dynamics in buffer layers for semiconductor devices fabricated on lattice-mismatched substrates, which enables technology for advanced computer chips, multi-junction solar cells, detectors, and microwave transistors. Physical Unclonable Functions (PUFs) are probabilistic circuit primitives that extract randomness from the physical characteristics of devices. One of the papers outlines PUF design based on resistor and capacitor variations for low pass filters (LoPUF). Spatial wavefunction switching (SWS) FETs, which can process 2-bits per FET using CMOS-SWS logic, thus enabling multivalued logic (MVL) and compact DRAMs. Perimeter gated single-photon avalanche diode (PGSPAD). The applied voltage at the gate terminal modulates the electric field, making it uniform throughout the junction. This gating technique is an efficient method to prevent premature edge breakdown, one of the major problems in operating avalanche photodiodes implemented in CMOS process.In summary, papers selected in this volume cover various aspects of high performance logic and circuits for high-speed electronic systems.

This book features the selected articles from the 25th annual symposiums Connecticut Microelectronics and Optoelectronics Consortium (CMOC), that focus on micro/nano-electronics and optoelectronics/Nano-photonics, to cover not only the technologies, but also the applications ranging from biosensors/nano-biosystems, to cyber security.Enabling materials research involving growth and characterization of novel devices such as multi-bit nonvolatile random access memory with fast erase, high performance circuits, and their potential applications in developing new high-speed systems. Other articles focus on emerging nanoelectronic devices including topological insulators, spatial wavefunction switching (SWS) FETs as compact high-speed 2-bit SRAM circuits, quantum dot channel (QDC) FETs. Fundamental work on critical layer thickness in ZnSe/GaAs and other material systems impacts electronic and photonic devise integrating mismatched layers are also reported. While another article investigates linearly graded GaAsP-GaAs system with emphasis on strain relaxation.Based on these technologies, area of analyzes multiple junction solar cells using semiconductors with different energy gaps, as a possible application were also featured; Pixel characterization of protein-based retinal implant, as well as a low-power and low-data-rate (100 kbps) fully integrated CMOS impulse radio ultra-wideband (IR-UWB) transmitter were investigated as a potential candidate for biomedical application. While other articles looked at carbon nanofibers/nanotubes for electrochemical sensing. In the area of cyber security, two articles present encrypted electron beam lithography fabricated nanostructures for authentication and nano-signatures for the identification of authentic electronic components.In summary, papers presented in this volume involve various aspects of high performance materials and devices for implementing high-speed electronic systems.

In this review volume, the editors have included the state-of-the-art research and development in nano composites, and optical electronics written by experts in the field. In addition, it also covers applications for emerging technologies in High-Speed Electronics.In summary, topics covered in this volume includes various aspects of high performance materials and devices for implementing High-Speed Electronic systems.

With the dawn of Gallium Oxide (Ga2OΓéâ) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2OΓéâand diamond.

This volume on Nanotechnology in Electronics, Photonics, Biosensors, and Emerging Technologies comprises research papers spanning from novel materials and devices, biosensors and bio-nano-systems, artificial intelligence, robotics and emerging technologies, to applications in each of these fields. These include blockchain improving security; ultra-sensitive Point of Care biosensor for detecting pathogeneses and detection of RNA-Virus infections; and advanced materials and devices such as ROM for anti-reverse engineering, FPGA bit-stream encryption, switching transients in memristors, and high-speed multi-bit logic and memories. Applications such as 3D-4D inkjet-printed wireless ultra-broadband modules for IOT, smarttag, and smart city applications are also included. In the area of material synthesis, carbon nanotube synthesis, III-nitride film growth via plasma-enhanced atomic layer deposition are noted. Threading dislocation behavior in InGaAs/GaAs (001) superlattice buffer layers brings a novel approach.Papers presented in this volume cover various aspects of high performance materials and devices for implementing high-speed electronic systems. This volume will serve as a useful reference for recent developments in nanotechnology.