Bücher der Reihe Springer Series in Solid-State Sciences

The field of highly frustrated magnetism has developed considerably and expanded over the last 15 years. Issuing from canonical geometric frustration of interactions, it now extends over other aspects with many degrees of freedom such as magneto-elastic couplings, orbital degrees of freedom, dilution effects, and electron doping.

High magnetic fields have been an important tool in semiconductor physics for a long time. For the area of high magnetic fields applied in semiconductor physics recent results are discussed, and the state-of-the-art is reviewed. Special attention has been paid to the rapidly growing field of semimagnetic semiconductors.

The continuous evolution and development of experimental techniques is at the basis of any fundamental achievement in modern physics.

Proceedings of the International Winter School, Kirchberg, Tyrol, March 7-14, 1992

This book provides an overview of recent developments in experiments probing the fractional quantum Hall (FQH) states of the second Landau level, especially the \nu=5/2 state. The experimental part of this book gives practical advice for solving the experimental challenges which researchers studying highly fragile FQH states are faced with.

This comprehensive book presents all aspects of acoustic metamaterials and phononic crystals. The emphasis is on acoustic wave propagation phenomena at interfaces such as refraction, especially unusual refractive properties and negative refraction.

The study of quantum fluids, stimulated by the discovery of superfluidity in liquid helium, has experienced renewed interest after the observation of Bose-Einstein condensation (BEC) in ultra-cold atomic gases and the observation a new type of quantum fluid with specific characteristics derived from its intrinsic out-of-equilibrium nature.

This book presents the latest results of quantum properties of light in the nanostructured environment supporting surface plasmons, including waveguide quantum electrodynamics, quantum emitters, strong-coupling phenomena and lasing in plasmonic structures.

This book covers different aspects of the physics of iron-based superconductors ranging from the theoretical, the numerical and computational to the experimental ones.

This book offers an essential introduction to the notions of sound wave topology, duality, coherence and wave-mixing, which constitute the emerging new science of sound.

This book covers different aspects of the physics of iron-based superconductors ranging from the theoretical, the numerical and computational to the experimental ones.

Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc.

This book covers basic and advanced aspects in the field of Topological Matter. It provides graduate level content introducing the basic concepts of the field, including an introductory session on group theory and topological classification of matter.

The book details how optical transitions in the active materials, such as semiconductor quantum dots and quantum wells, can be described using a quantum approach to the dynamics of solid-state electrons under quantum confinement and their interaction with phonons, as well as their external pumping by electrical currents.

This book presents the latest results of quantum properties of light in the nanostructured environment supporting surface plasmons, including waveguide quantum electrodynamics, quantum emitters, strong-coupling phenomena and lasing in plasmonic structures.

It starts from basic approaches to non-equilibrium physics, such as the mean-field approach, then proceeds to more advanced methods, such as dynamical mean-field theory and master equation approaches.

The book details how optical transitions in the active materials, such as semiconductor quantum dots and quantum wells, can be described using a quantum approach to the dynamics of solid-state electrons under quantum confinement and their interaction with phonons, as well as their external pumping by electrical currents.

The book covers the flux pinning mechanisms and properties and the electromagnetic phenomena caused by the flux pinning common for metallic, high-Tc and MgB2 superconductors. The condensation energy interaction known for normal precipitates or grain boundaries and the kinetic energy interaction proposed for artificial Nb pins in Nb-Ti, etc. are introduced for the pinning mechanism. Summation theories to derive the critical current density are discussed in detail. Irreversible magnetization and AC loss caused by the flux pinning are also discussed. The loss originally stems from the ohmic dissipation of normal electrons in the normal core driven by the electric field induced by the flux motion.The readers will learn why the resultant loss is of hysteresis type in spite of such mechanism. The influence of the flux pinning on the vortex phase diagram in high Tc superconductors is discussed and the dependencies of the irreversibility field are also described on other quantities such as anisotropy of superconductor, specimen size and electric field strength. Recent developments of critical current properties in various high-Tc superconductors and MgB2 are introduced.Other topics are: singularity in the case of transport current in a parallel magnetic field such as deviation from the Josephson relation, reversible flux motion inside pinning potentials which causes deviation from the critical state model prediction, the concept of the minimization of energy dissipation in the flux pinning phenomena which gives the basis for the critical state model, etc. Significant reduction in the AC loss in AC wires with very fine filaments originates from the reversible flux motion which is dominant in the two-dimensional pinning. The concept of minimum energy dissipation explains also the behavior of flux bundle size which determines the irreversibility line under the flux creep.The new edition has been thoroughly updated, with new sections on the progress in enhancing the critical current density in high temperature superconductors by introduction of artificial pinning centers, the effect of packing density on the critical current density and irreversibility field in MgB2 and derivation of the force-balance equation from the minimization of the free energy including the pinning energy.

Quasicrystals are a new form of the solid state which differ from the other two known forms, crystalline and amorphous, by possesing a new type of long-range translational order, called quasiperiodicty, and a noncrystallographic orientational order. This book provides an up-to-date description of the unusual physical properties of these new materials. Emphasis is placed on the experimental results, which are compared with those of the corresponding crystalline and amorphous systems and discussed in terms of modern theoretical models. Written by leading authorities in the field, the book will be of great use both to experienced workers in the field and to uninitiated graduate students.

This book, now in its ninth edition, still has the character of a textbook with the emphasis on "e;Physics"e;. The volume has increased somewhat because several improvements have been made and some new items have been included. In Sect. 13. 2 the new Quantum Cascade Laser which covers the far in- frared spectral range has been added. In Sect. 14. 4 the theory of the quantum Hall effect is now based on ballistic transport which in a more general respect without referring to the then still unknown quantum Hall effect was consid- ered already by Rudolf Peierls. In the same chapter, the recent discovery of a low-temperature resistance oscillation in a very pure semiconductor under the influence of combined dc and ac electric fields in addition to a magnetic field is presented. Furthermore, quantum Hall effect observations with an unprece- dented high precision are remarkable and may give a new impetus to theory. A new Sect. 15. 5 presents information about coaxial carbon tubes of nanometer size diameter and how they are integrated as the current transporting element in a field effect transistor. In another new addition Sect. 15. 6 with the title Molecular Electronics, the current-voltage rectifying characteristics of an or- ganic Langmuir-Blodgett film of nanometer thickness is shown. These efforts serve to demonstrate where the ever decreasing size of electronic circuits may come to its natural limits. The system of units preferred here is the SI system.

The experimental discovery of the fractional quantum Hall effect (FQHE) at the end of 1981 by Tsui, Stormer and Gossard was absolutely unexpected since, at this time, no theoretical work existed that could predict new struc­ tures in the magnetotransport coefficients under conditions representing the extreme quantum limit. It is more than thirty years since investigations of bulk semiconductors in very strong magnetic fields were begun. Under these conditions, only the lowest Landau level is occupied and the theory predicted a monotonic variation of the resistivity with increasing magnetic field, depending sensitively on the scattering mechanism. However, the ex­ perimental data could not be analyzed accurately since magnetic freeze-out effects and the transitions from a degenerate to a nondegenerate system complicated the interpretation of the data. For a two-dimensional electron gas, where the positive background charge is well separated from the two­ dimensional system, magnetic freeze-out effects are barely visible and an analysis of the data in the extreme quantum limit seems to be easier. First measurements in this magnetic field region on silicon field-effect transistors were not successful because the disorder in these devices was so large that all electrons in the lowest Landau level were localized. Consequently, models of a spin glass and finally of a Wigner solid were developed and much effort was put into developing the technology for improving the quality of semi­ conductor materials and devices, especially in the field of two-dimensional electron systems.