Bücher von Raed Amro

Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within ¿s is possible. Thereby a dissipation power up to 400W per chip is generated. Compared to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated (