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Design, Simulation and Construction of Field Effect Transistors

Über Design, Simulation and Construction of Field Effect Transistors

In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.

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  • Sprache:
  • Englisch
  • ISBN:
  • 9781789234169
  • Einband:
  • Gebundene Ausgabe
  • Seitenzahl:
  • 166
  • Veröffentlicht:
  • 18. Juli 2018
  Versandkostenfrei
  Versandfertig in 1-2 Wochen.
Verlängerte Rückgabefrist bis 31. Januar 2025

Beschreibung von Design, Simulation and Construction of Field Effect Transistors

In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.

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