Große Auswahl an günstigen Büchern
Schnelle Lieferung per Post und DHL

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Über Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

Mehr anzeigen
  • Sprache:
  • Englisch
  • ISBN:
  • 9783030085940
  • Einband:
  • Taschenbuch
  • Seitenzahl:
  • 232
  • Veröffentlicht:
  • 30. Januar 2019
  • Ausgabe:
  • 12018
  • Abmessungen:
  • 155x235x13 mm.
  • Gewicht:
  • 454 g.
  Versandkostenfrei
  Sofort lieferbar

Beschreibung von Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.

Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;

Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion;

Enables design of smaller, cheaper and more efficient power supplies.

Kund*innenbewertungen von Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion



Ähnliche Bücher finden
Das Buch Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion ist in den folgenden Kategorien erhältlich:

Willkommen bei den Tales Buchfreunden und -freundinnen

Jetzt zum Newsletter anmelden und tolle Angebote und Anregungen für Ihre nächste Lektüre erhalten.