Bücher der Reihe International Series On Advances In Solid State Electronics And Technology

Provides a description of the compact MOS transistor models for circuit simulation. This book considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.

Presents the art of advanced MOSFET modeling for integrated circuit simulation and design. This book provides the essential mathematical and physical analyses of the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits.

Would you like to add the capabilities of the Non-Volatile Memory (NVM) as a storage element in your silicon integrated logic circuits, and as a trimming sector in your high voltage driver and other silicon integrated analog circuits? Would you like to learn how to embed the NVM into your silicon integrated circuit products to improve their performance? This book is written to help you. It provides comprehensive instructions on fabricating the NVM using the same processes you are using to fabricate your logic integrated circuits. We at our eMemory company call this technology the embedded Logic NVM. Because embedded Logic NVM has simple fabrication processes, it has replaced the conventional NVM in many traditional and new applications, including LCD driver, LED driver, MEMS controller, touch panel controller, power management unit, ambient and motion sensor controller, micro controller unit (MCU), security ID setting tag, RFID, NFC, PC camera controller, keyboard controller, and mouse controller. The recent explosive growth of the Logic NVM indicates that it will soon dominate all NVM applications. The embedded Logic NVM was invented and has been implemented in users' applications by the 200+ employees of our eMemory company, who are also the authors and author-assistants of this book. This book covers the following Logic NVM products: One Time Programmable (OTP) memory, Multiple Times Programmable (MTP) memory, Flash memory, and Electrically Erasable Programmable Read Only Memory (EEPROM). The fundamentals of the NVM are described in this book, which include: the physics and operations of the memory transistors, the basic building block of the memory cells and the access circuits. All of these products have been used continuously by the industry worldwide. In-depth readers can attain expert proficiency in the implementation of the embedded Logic NVM technology in their products.

Suitable for professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, this book offers an overview on different device designs of modern bipolar transistors, along with their operating conditions. It offers a basis for the understanding of modern compact models.

Deals with the MOS Field Effect Transistor models that are derived from basic semiconductor theory. This book discusses how to measure device model parameters required for circuit simulations. It emphasizes the assumptions used to arrive at the models, so that the accuracy of the models in describing the device characteristics are understood.

Presents a description of the electro migration in integrated circuits. This book examines the various interconnected systems and their evolution employed in integrated circuit technology. It is suitable for readers on electro migration in ULSI interconnections.

Presents an account of the invention of Integrated Circuits (ICs). This book gives documented facts of the invention of ICs, analyzes the patents, and highlights details and clarifications to its history.